? 2006 ixys corporation all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c55v v dgr t j = 25 c to 175 c; r gs = 1 m ? 55 v v gsm transient 20 v i d25 t c = 25 c 110 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 300 a i ar t c = 25 c25a e as t c = 25 c 750 mj dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 5 ? p d t c = 25 c 230 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-220 3 g to-263 2.5 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a55v v gs(th) v ds = v gs , i d = 100 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 2 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 5.8 7.0 m ? trenchmv tm power mosfet preliminary technical information n-channel enhancement mode avalanche rated IXTA110N055T ixtp110n055t v dss =55 v i d25 =110 a r ds(on) 7.0 m ? ? ? ? ? ds99625 (11/06) to-263 (ixta) to-220 (ixtp) g s g d s g = gate d = drain s = source tab = drain (tab) (tab) features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - high side switch - 12v battery - abs systems dc/dc converters and off-line ups primary- side switch high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. IXTA110N055T ixtp110n055t symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 , note 1 38 65 s c iss 3080 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 560 pf c rss 140 pf t d(on) resistive switching times 20 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 30 n s t d(off) r g = 5 ? (external) 40 n s t f 24 ns q g(on) 67 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 17.5 nc q gd 15 nc r thjc 0.65 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 110 a i sm pulse width limited by t jm 300 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s70ns v r = 25 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263 (ixta) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220 (ixtp) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved IXTA110N055T ixtp110n055t fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 110 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 16 18 20 v ds - volts i d - amperes v gs = 10v 8v 6v 7v 5v 9v fig. 3. output characteristics @ 150oc 0 10 20 30 40 50 60 70 80 90 100 110 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v ds - volts i d - amperes v gs = 10v 9v 8v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 55a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 110a i d = 55a fig. 5. r ds(on) normalized to i d = 55a value vs. drain current 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 10 20 30 40 50 60 70 80 90 100 110 120 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 & to-220
ixys reserves the right to change limits, test conditions, and dimensions. IXTA110N055T ixtp110n055t fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 33.544.555.566.57 v gs - volts i d - amperes t j = -40oc 25oc 150oc fig. 8. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 160 180 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 10203040506070 q g - nanocoulombs v gs - volts v ds = 27.5v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w
? 2006 ixys corporation all rights reserved IXTA110N055T ixtp110n055t fig. 14. resistive turn-on rise time vs. drain current 21 22 23 24 25 26 27 28 29 30 31 20 22 24 26 28 30 32 34 36 38 40 i d - amperes t r - nanosecond s r g = 5 ? v gs = 10v v ds = 27.5v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 5 7 9 111315171921232527293133 r g - ohms t r - nanoseconds 18.0 20.5 23.0 25.5 28.0 30.5 33.0 35.5 38.0 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 27.5v i d = 40a i d = 20a fig. 16. resistive turn-off switching times vs. junction temperature 23.0 23.5 24.0 24.5 25.0 25.5 26.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanosecond s 35.0 37.5 40.0 42.5 45.0 47.5 50.0 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 27.5v i d = 20a i d = 40a fig. 17. resistive turn-off switching times vs. drain current 23 24 25 26 27 20 22 24 26 28 30 32 34 36 38 40 i d - amperes t f - nanoseconds 35.0 37.5 40.0 42.5 45.0 47.5 50.0 52.5 55.0 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 27.5v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 21 22 23 24 25 26 27 28 29 30 31 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 5 ? v gs = 10v v ds = 27.5v i d = 40a i d = 20a fig. 18. resistive turn-off switching times vs. gate resistance 20 30 40 50 60 70 80 90 100 110 120 5 7 9 111315171921232527293133 r g - ohms t f - nanoseconds 30 60 90 120 150 180 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 27.5v i d = 40a i d = 20a ixys ref: t_110n055t (3v) 7-11-06.xls
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